The effect of auger mechanism on n(+)-p GaInAsSb infrared photovoltaic detectors

Authors
Tian, YA Zhou, TM Zhang, BL Jiang, H Jin, YX
Citation
Ya. Tian et al., The effect of auger mechanism on n(+)-p GaInAsSb infrared photovoltaic detectors, IEEE DEVICE, 46(4), 1999, pp. 656-660
Citations number
16
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
IEEE TRANSACTIONS ON ELECTRON DEVICES
ISSN journal
00189383 → ACNP
Volume
46
Issue
4
Year of publication
1999
Pages
656 - 660
Database
ISI
SICI code
0018-9383(199904)46:4<656:TEOAMO>2.0.ZU;2-9
Abstract
In this paper, the theoretical analysis of the Auger mechanism in n(+)-p Ga InAsSb infrared photovoltaic detectors is reported, The lifetime caused by the Auger mechanism is calculated depending on the compositions, temperatur e, and carrier concentration, We also analyze the effect of material parame ters on the detectivity of the n(+)-p GaInAsSb detectors. The calculated re sults show that the Auger mechanism could be suppressed by optimizing the m aterial parameters, so that the performance of GaInAsSb infrared photovolta ic detectors is improved.