Characterization and optimization of infrared poly SiGe bolometers

In this paper, we present a complete characterization of poly SiGe bolomete rs. Devices having different dimensions and different geometry have been fa bricated. The dependence of the low-frequency noise and of the temperature coefficient of resistance (TCR) on resistivity in poly SiGe has been measur ed and modeled. The impact of resistivity, bias voltage, thermal conductanc e, thickness, and dimensions of the active element on the device performanc e has been investigated. It has been demonstrated that, by using the approp riate absorber and by optimizing the device parameters, poly SiGe bolometer s are suitable for realizing high-performance focal plane arrays (FPA's).