A novel transient simulation for 3-D multilevel interconnections on complex topography

Citation
Hm. Hou et al., A novel transient simulation for 3-D multilevel interconnections on complex topography, IEEE DEVICE, 46(4), 1999, pp. 690-695
Citations number
8
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
IEEE TRANSACTIONS ON ELECTRON DEVICES
ISSN journal
00189383 → ACNP
Volume
46
Issue
4
Year of publication
1999
Pages
690 - 695
Database
ISI
SICI code
0018-9383(199904)46:4<690:ANTSF3>2.0.ZU;2-6
Abstract
An efficient method is presented to model the transient characteristics of distributed resistor-capacitor of ULSI multilevel interconnections on compl ex topography, in which the reformulation of the boundary-element method (B EM) and the Pade-via-Lanczos (PVL) algorithm associated with multilayer Gre en's function can avoid the redundant works on both volume mesh and transie nt analysis associated with the finite-difference method. An adaptive multi layer Green's function is adopted to investigate several cases that have re vealed interesting physical mechanisms in charge transfer between conductor s on multilayer topography. To improve the timing analysis efficiency of th e finite-difference method, the dominant poles are obtained by introducing the PVL algorithm for model-ol der reduction. Hence, it is easy to calculat e the transient characteristics of both parallel conductors and complicated configurations such as crossing lines, corners, contacts, multilayers, and their combinations.