A large-signal SOI MOSFET model including dynamic self-heating based on small-signal model parameters

A new technique for a large-signal SOI MOSFET model with self-heating is pr oposed, based on thermal and electrical parameters extracted by fitting a s mall-signal model to measured s-parameters. ri thermal derivative approach is developed to calculate the thermal resistance when the isothermal de dra in conductance is extracted from small-signal fitting. The thermal resistan ce is used to convert the measured de current-voltage (I-V) characteristics containing the self-heating effects to the isothermal I-V characteristics needed for the large-signal model, Large-signal pulse and sinusoidal input signals are used to verify the model by measurement, and shown to reproduce the observed large-signal behavior of the devices with great accuracy, esp ecially when two or more thermal time constants are used.