Electric-field penetration into metals: Consequences for high-dielectric-constant capacitors

Citation
Ct. Black et Jj. Welser, Electric-field penetration into metals: Consequences for high-dielectric-constant capacitors, IEEE DEVICE, 46(4), 1999, pp. 776-780
Citations number
23
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
IEEE TRANSACTIONS ON ELECTRON DEVICES
ISSN journal
00189383 → ACNP
Volume
46
Issue
4
Year of publication
1999
Pages
776 - 780
Database
ISI
SICI code
0018-9383(199904)46:4<776:EPIMCF>2.0.ZU;2-S
Abstract
A consequence of the finite electronic screening length in metals is that e lectric fields penetrate short distances into the metal surface. Using a si mple, semiclassical model of an idealized capacitor, we estimate the capaci tance correction due to the distribution of displacement charge in the meta l electrodes. We compare our result with experimental data from thin-film h igh-dielectric-constant capacitors, which are currently leading contenders for use in future high-density memory applications. This intrinsic mechanis m contributes to the universally-seen decrease in measured dielectric const ant with capacitor film thickness.