Citation
Ks. Son et al., Metal node contact TFT SRAM cell for high-speed, low-voltage applications, IEEE DEVICE, 46(4), 1999, pp. 805-806
Citations number
4
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
IEEE TRANSACTIONS ON ELECTRON DEVICES
ISSN journal
00189383
→ ACNP
Volume
46
Issue
4
Year of publication
1999
Pages
805 - 806
Database
ISI
SICI code
0018-9383(199904)46:4<805:MNCTSC>2.0.ZU;2-P
Abstract
The parasitic diode contact in the bottom gate thin-film transistor (TFT) s
tatic random access memory (SRAM) cell limits its high node charging curren
t. The charging of 15 fF load capacitor to 0.1-0.2 V below V-cc takes about
0.65 ms. This adverse effect is circumvented in the metal contact TFT SRAM
cell, whose charging to full V-cc is seven times faster.