Low-frequency noise characteristics of p-GaAs homojunction interfacial work
-function internal photoemission (HIWIP) far-infrared (FTR) detectors are r
eported. The noise was found to exhibit lif behavior related to interface s
tates at frequencies below 1 kHz and frequency independent shot noise at hi
gher frequencies. The noise expressions correctly predict the dark; current
noise behavior, and provide a means of estimating both the gain and energy
distribution of the interface states. The interface state density is estim
ated to be in the order of 10(11) cm(-2) It has been shown that the estimat
ed gain and noise equivalent power are in good agreement with the previous
results obtained via optical measurements.