A study of rapid photothermal annealing on the electrical properties and reliability of tantalum pentoxide

Authors
Chen, Y Singh, R Rajan, K Dumin, DJ DeBoer, S Thakur, RPS
Citation
Y. Chen et al., A study of rapid photothermal annealing on the electrical properties and reliability of tantalum pentoxide, IEEE DEVICE, 46(4), 1999, pp. 814-816
Citations number
9
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
IEEE TRANSACTIONS ON ELECTRON DEVICES
ISSN journal
00189383 → ACNP
Volume
46
Issue
4
Year of publication
1999
Pages
814 - 816
Database
ISI
SICI code
0018-9383(199904)46:4<814:ASORPA>2.0.ZU;2-N
Abstract
Rapid photothermal annealing is based on the use of vacuum ultraviolet (VUV ) photons as the source of optical energy and tungsten halogen lamps as the source of optical and thermal energy. Tantalum pentoxide (Ta2O5) thin film s deposited bg thermal metalorganic chemical vapor deposition (MOCVD) have been annealed by RPP and conventional rapid thermal annealing (RTP). hs com pared to samples annealed by RTP, lower leakage current and lower trap dens ities were observed in the samples annealed by RPP.