On the accuracy of generation lifetime measurement in high-resistivity silicon using PN gated diodes

Authors
Verzellesi, G Dalla Betta, GF Bosisio, L Boscardin, M Pignatel, GU Soncini, G
Citation
G. Verzellesi et al., On the accuracy of generation lifetime measurement in high-resistivity silicon using PN gated diodes, IEEE DEVICE, 46(4), 1999, pp. 817-820
Citations number
8
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
IEEE TRANSACTIONS ON ELECTRON DEVICES
ISSN journal
00189383 → ACNP
Volume
46
Issue
4
Year of publication
1999
Pages
817 - 820
Database
ISI
SICI code
0018-9383(199904)46:4<817:OTAOGL>2.0.ZU;2-2
Abstract
We show that in high-resistivity silicon bulk generation lifetime and surfa ce generation velocity can not be measured with acceptable accuracy using a single gated diode, unless the gate length is suitably tailored. The accur acy with which bulk generation lifetime can be evaluated is, in particular, limited by nonidealities, contributing extra components to the gated-diode current, which are not accounted for in the standard extraction procedure.