An 0.1-mu m asymmetric halo by large-angle-tilt implant (AHLATI) MOSFET for high performance and reliability

Authors
Shin, H Lee, S
Citation
H. Shin et S. Lee, An 0.1-mu m asymmetric halo by large-angle-tilt implant (AHLATI) MOSFET for high performance and reliability, IEEE DEVICE, 46(4), 1999, pp. 820-822
Citations number
11
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
IEEE TRANSACTIONS ON ELECTRON DEVICES
ISSN journal
00189383 → ACNP
Volume
46
Issue
4
Year of publication
1999
Pages
820 - 822
Database
ISI
SICI code
0018-9383(199904)46:4<820:A0MAHB>2.0.ZU;2-I
Abstract
A sem 0.1-mu m MOSFET structure called asymmetric halo by large-angle-tilt implant (AHLATI) is proposed for substantial reduction of short-channel and hot-carrier effects while enhancing the current driving capability. This s tructure differs from the conventional devices in that it has an asymmetric channel profile with a localized pileup region next to the source junction .