Comparison of high-power IGBT's and hard-driven GTO's for high-power inverters

Authors
Bernet, S Teichmann, R Zuckerberger, A Steimer, PK
Citation
S. Bernet et al., Comparison of high-power IGBT's and hard-driven GTO's for high-power inverters, IEEE IND AP, 35(2), 1999, pp. 487-495
Citations number
16
Categorie Soggetti
Engineering Management /General
Journal title
IEEE TRANSACTIONS ON INDUSTRY APPLICATIONS
ISSN journal
00939994 → ACNP
Volume
35
Issue
2
Year of publication
1999
Pages
487 - 495
Database
ISI
SICI code
0093-9994(199903/04)35:2<487:COHIAH>2.0.ZU;2-L
Abstract
This paper compares hard-driven gate-turn-off thyristors (IGCT's) and high- power insulated gate bipolar transistor (IGBT) modules in a two-level pulse width modulation inverter, The structure, fundamental operation, and specif ic characteristics of the considered devices are shown. Simulations enable a loss comparison of IGCT's and IGBT's in a 1.14-MVA inverter at switching frequencies of f(s) = 250 Hz/500 Hz. The evaluation of device characteristi cs is the basis for a derivation of potential applications.