Low dc power Si-MOSFET L- and C-band low noise amplifiers fabricated by SIMOX technology

This paper reports L-band and C-band monolithic low noise amplifiers (LNA) fabricated with MOSFET/SIMOX (Separation by IMplanted OXygen) technology fo r the first time. The L-band LNA exhibits a Gain/(PdcNF) ratio of 0.7/mW, w hich demonstrate the potential performance advantage of this technology. Th e C-band LNA has 0.05/mW at 5.8 GHz. The L-band amplifier had a gain of 8.5 dB at 0.5 V, which is the lowest supply voltage ever reported in Si-based LNAs. These LNAs consist of 0.25-mu m nMOSFET/SIMOX, spiral inductors, and capacitors which are fabricated with a conventional digital CMOS LSI proces s. It demonstrates that L- and C-band RF circuits can be made on a SIMOX wa fer together with large-scale digital circuits.