Formation mechanism of antiphase boundary structure in molecular beam epitaxy grown InGaAs/(110)InP

Authors
Kangawa, Y Kojima, C Kuwano, N Oki, K
Citation
Y. Kangawa et al., Formation mechanism of antiphase boundary structure in molecular beam epitaxy grown InGaAs/(110)InP, JPN J A P 1, 38(1A), 1999, pp. 40-41
Citations number
11
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS → ACNP
Volume
38
Issue
1A
Year of publication
1999
Pages
40 - 41
Database
ISI
SICI code
Abstract
We have studied the morphology of antiphase boundaries (APBs) and their for mation mechanism in CuAu-I type ordered InGaAs grown on a vicinal(110)InP s ubstrate; In InGaAs grown at 380 degrees C, APBs are formed parallel to (11 0) by the flow of one-monolayer steps. In InGaAs grown at 450 degrees C, th e normal directions of APBs are slightly tilted toward [00 (1) over bar] or [001] from (110) and some APBs show a hairpin shape. New formation mechani sms of these APBs are proposed.