Epitaxial growth of Bi4Ti3O12 thin films on LaAlO3(012) and MgO(100) by dipping-pyrolysis process

Authors
Hwang, KS Kim, BH Manabe, T Yamaguchi, I Kumagai, T Mizuta, S
Citation
Ks. Hwang et al., Epitaxial growth of Bi4Ti3O12 thin films on LaAlO3(012) and MgO(100) by dipping-pyrolysis process, JPN J A P 1, 38(1A), 1999, pp. 219-220
Citations number
8
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS → ACNP
Volume
38
Issue
1A
Year of publication
1999
Pages
219 - 220
Database
ISI
SICI code
Abstract
Epitaxially grown Bi4Ti3O12 films On LaAlO3(012) and MgO(100) substrates ha ve been prepared by the dipping-pyrolysis process using metal naphthenates. It was confirmed that the degree of epitaxy of the films strongly depends on the lattice misfit between the Bi4Ti3O12 film and the substrate used; th e film on LaAlO3(012), with a small lattice-misfit value, showed a high deg ree of epitaxy in comparison with the film on MgO(100).