Room-temperature continuous-wave operation of InGaN multi-quantum-well laser diodes grown on an n-GaN substrate with a backside n-contact

Authors
Kuramoto, M Sasaoka, C Hisanaga, Y Kimura, A Yamaguchi, AA Sunakawa, H Kuroda, N Nido, M Usui, A Mizuta, M
Citation
M. Kuramoto et al., Room-temperature continuous-wave operation of InGaN multi-quantum-well laser diodes grown on an n-GaN substrate with a backside n-contact, JPN J A P 2, 38(2B), 1999, pp. L184-L186
Citations number
15
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS → ACNP
Volume
38
Issue
2B
Year of publication
1999
Pages
L184 - L186
Database
ISI
SICI code
Abstract
Continuous-wave operation at room-temperature has been demonstrated for InG aN multi-quantum-well (MQW) laser diodes (LDs) grown on low-dislocation-den sity n-GaN substrates with a backside n-contact. The current, current densi ty and voltage at the lasing threshold were 144 mA, 10.9 kA/cm(2) and 10.5 V, respectively, for a 3 mu m wide ridge-geometry diode with high-reflectio n dielectric coated mirrors. Single-transverse-mode emission was observed i n the far-field pattern of the LDs and the beam full width at half power in the parallel and perpendicular directions was 6 degrees and 25 degrees, re spectively.