The effects of shallow germanium halo doping on N-channel metal oxide semiconductor field effect transistors

In this paper, we report the use of shallow germanium halo doping on improv ing the short-channel effects of deep submicron n-channel metal-oxide-semic onductor field effect transistors. It is demonstrated that by adding a shal low (i.e., 10 keV) germanium large-angle-tilt implant (LATID), V-th lowerin g in short-channel transistors is significantly improved. The improvement i s found to increase with increasing germanium dose. A low germanium dose (e .g., 5 x 10(12) cm(-2)) is also found to effectively improve the drain-indu ced barrier lowering (DIBL) of the short-channel transistors. Our results a lso show that junction leakage degradation, which has been previously repor ted to accompany germanium implants using higher energy, can be minimized b y the shallow low-dose implant used in this study.