Selective field evaporation in field-ion microscopy for ordered alloys

Authors
Ge, XJ Chen, NX Zhang, WQ Zhu, FW
Citation
Xj. Ge et al., Selective field evaporation in field-ion microscopy for ordered alloys, J APPL PHYS, 85(7), 1999, pp. 3488-3493
Citations number
34
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
JOURNAL OF APPLIED PHYSICS
ISSN journal
00218979 → ACNP
Volume
85
Issue
7
Year of publication
1999
Pages
3488 - 3493
Database
ISI
SICI code
0021-8979(19990401)85:7<3488:SFEIFM>2.0.ZU;2-U
Abstract
Semiempirical pair potentials, obtained by applying the Chen-inversion tech nique to a cohesion equation of Rose et al. [Phys. Rev. B 29, 2963 (1984)], are employed to assess the bonding energies of surface atoms of intermetal lic compounds. This provides a new calculational model of selective field e vaporation in field-ion microscopy (FIM). Based on this model, a successful interpretation of FIM image contrasts for Fe3Al, PtCo, Pt3Co, Ni4Mo, Ni3Al , and Ni3Fe is given. (C) 1999 American Institute of Physics. [S0021-8979(9 9)07306-5].