Growth and characterization of nanoscale 3C-SiC islands on Si substrates

Three-dimensional nanoscale SiC islands were grown directly on to (111) cry stalline Si substrates by reaction with hydrogen-plasma-containing Si and C radicals at temperatures between 650 and 900 degrees C. X-ray diffraction and transmission electron microscopy observations show that the islands are composed of (111)-oriented cubic SiC (3C-SiC) grains. Nucleation of the is lands took place at conical projections on the Si substrate surface produce d by hydrogen plasma etching. At the highest substrate temperatures the dia meter and density of the islands were smallest, while their height was grea test and their structure most disordered. (C) 1999 American Institute of Ph ysics. [S0021-8979(99)00307-2].