Nanoscale desorption of H-passivated Si(100)-2x1 surfaces using an ultrahigh vacuum scanning tunneling microscope

Nanoscale desorption of the Si(100)-2x1 hydrogen terminated surface has bee n achieved using a scanning tunneling microscope (STM) in an ultrahigh vacu um chamber. We have studied the patterned linewidth as a function of the sa mple bias and the dose, either with the feedback servo loop on or off. We p ropose a simple analytical model to explain the variation of the linewidth versus the electron dose. Finally, we show that the best resolution is obta ined for pulsed voltages with the STM feedback servo loop on. (C) 1999 Amer ican Institute of Physics. [S0021-8979(99)04207-3].