Crystallinity evaluation of phosphorus-doped n-type diamond thin film

The crystallinity of a phosphorus-doped n-type diamond thin film as grown o n a C(001) substrate by gas source molecular beam epitaxy has been examined by x-ray photoelectron diffraction (XPD) and atomic force microscopy (AFM) . AFM showed that the growth mode of the n-type film is not an island-growt h type that hinders the application of XPD. C 1s XPD patterns for the n-typ e film and the substrate showed almost perfect similarity. This proves that , like the substrate, the phosphorus-doped n-type thin film is in a good di amond structure. (C) 1999 American Institute of Physics. [S0021-8979(99)032 07-7].