ULTRAFAST PHOTOCONDUCTORS FROM LOW-TEMPERATURE MOCVD-GROWN GAAS AND INGAAS EPITAXIAL LAYERS

Citation
A. Krotkus et al., ULTRAFAST PHOTOCONDUCTORS FROM LOW-TEMPERATURE MOCVD-GROWN GAAS AND INGAAS EPITAXIAL LAYERS, Applied physics. A, Solids and surfaces, 58(2), 1994, pp. 177-181
Citations number
18
Categorie Soggetti
Physics, Applied
ISSN journal
07217250
Volume
58
Issue
2
Year of publication
1994
Pages
177 - 181
Database
ISI
SICI code
0721-7250(1994)58:2<177:UPFLMG>2.0.ZU;2-F
Abstract
GaAs and InGaAs epitaxial layers were grown by Metal-Organic Chemical Vapor Deposition at Low substrate Temperatures (LT-MOCVD). The layers, grown at temperatures below 430 degrees C were semi-insulating. Trans mission electron microscopy images reveal uniformly distributed 3-10 n m size clusters which consist, most probably, of zinc. Photodetectors fabricated from those layers feature nonlinear photocurrent versus opt ical power dependence. The nonlinearities are explained in terms of el ectric field redistribution. The nonlinear photoconductive correlation measurements show that excess carrier lifetimes are in the range of 2 0-50 ps.