An intrinsic carbon nanotube heterojunction diode

Citation
G. Treboux et al., An intrinsic carbon nanotube heterojunction diode, J PHYS CH B, 103(11), 1999, pp. 1871-1875
Citations number
23
Categorie Soggetti
Physical Chemistry/Chemical Physics
Journal title
JOURNAL OF PHYSICAL CHEMISTRY B
ISSN journal
15206106 → ACNP
Volume
103
Issue
11
Year of publication
1999
Pages
1871 - 1875
Database
ISI
SICI code
1520-6106(19990318)103:11<1871:AICNHD>2.0.ZU;2-A
Abstract
Carbon nanotubes are metallic, semimetallic, or semiconducting, depending o n their helicity. This raises the possibility of forming nanoelectronic dev ices by joining tubes of differing helicity. We report calculations of the electronic properties of pairs of "armchair" and "zigzag" nanotubes joined linearly. The linear junction in each case consists of a nonalternant band of 5- and 7-membered rings. For a metal-semiconductor armchair-zigzag syste m, charge transfer from the armchair segment to the zigzag segment is calcu lated to occur. The distribution of electrostatic potentials seen by any el ectron transferred through the system is asymmetric along the tube axis, so the system is expected to exhibit rectifying behavior. The linear junction has specific electronic properties consistent with recent measurements of rectification in carbon nanotubes.