Molecular hydrogen traps within silicon

Authors
Hourahine, B Jones, R Oberg, S Briddon, PR
Citation
B. Hourahine et al., Molecular hydrogen traps within silicon, MAT SCI E B, 58(1-2), 1999, pp. 24-25
Citations number
16
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
ISSN journal
09215107 → ACNP
Volume
58
Issue
1-2
Year of publication
1999
Pages
24 - 25
Database
ISI
SICI code
0921-5107(19990212)58:1-2<24:MHTWS>2.0.ZU;2-F
Abstract
We present the results of first principle calculations on the behaviour of molecular hydrogen within crystalline silicon, both as an isolated species, and within defects in the material. These results are compared with recent experimental infra-red and Raman data obtained for silicon treated by eith er hydrogen plasma or soaked in hydrogen gas. The effect of Fermi-level pos ition on the diffusion barrier of molecular hydrogen within silicon is also discussed. (C) 1999 Elsevier Science S.A. All rights reserved.