Photoluminescence characterisation of hydrogen-related centres in silicon

Authors
Safonov, AN Lightowlers, EC
Citation
An. Safonov et Ec. Lightowlers, Photoluminescence characterisation of hydrogen-related centres in silicon, MAT SCI E B, 58(1-2), 1999, pp. 39-47
Citations number
33
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
ISSN journal
09215107 → ACNP
Volume
58
Issue
1-2
Year of publication
1999
Pages
39 - 47
Database
ISI
SICI code
0921-5107(19990212)58:1-2<39:PCOHCI>2.0.ZU;2-2
Abstract
The results of photoluminescence studies on hydrogen-related centres create d in thermal treated silicon are reported. An account is given of the optic al, electronic and structural characteristics of the defects obtained from uniaxial stress, magnetic field and temperature-dependence measurements and from isotope substitution. It is shown that most of the centres create an acceptor state ( - /0) in the upper half of the band gap and that their exc ited electronic states can be accounted for within the effective mass appro ximation. (C) 1999 Elsevier Science S.A. All rights reserved.