Ionisation and trapping of hydrogen at SiO2 interfaces

Authors
Afanas'ev, VV Stesmans, A
Citation
Vv. Afanas'Ev et A. Stesmans, Ionisation and trapping of hydrogen at SiO2 interfaces, MAT SCI E B, 58(1-2), 1999, pp. 56-59
Citations number
15
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
ISSN journal
09215107 → ACNP
Volume
58
Issue
1-2
Year of publication
1999
Pages
56 - 59
Database
ISI
SICI code
0921-5107(19990212)58:1-2<56:IATOHA>2.0.ZU;2-5
Abstract
Annealing of interfaces between SiO2 and (111)Si, (100)Si in H-2 in the tem perature range 450-800 degrees C is found to introduce a considerable densi ty (up to 10(13) cm(-2)) of positively charged centres. There is no compara ble density of dangling bonds initially present nor generated during the an nealing at the Si/SiO2 interfaces or in the SiO2 layer that could account f or the observed hydrogen bonding. Therefore, the hydrogen is suggested to b e trapped in the positively charged valence alternation state 3-fold coordi nated oxygen resembling the well known hydronium ion (H3O)(+). (C) 1999 Els evier Science S.A. All rights reserved.