Low temperature hydrogenation of dislocated Si

Authors
Feklisova, OV Yakimov, EB Yarykin, NA Weber, J
Citation
Ov. Feklisova et al., Low temperature hydrogenation of dislocated Si, MAT SCI E B, 58(1-2), 1999, pp. 60-63
Citations number
15
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
ISSN journal
09215107 → ACNP
Volume
58
Issue
1-2
Year of publication
1999
Pages
60 - 63
Database
ISI
SICI code
0921-5107(19990212)58:1-2<60:LTHODS>2.0.ZU;2-L
Abstract
The effect of wet chemical etching and subsequent annealing on the electric al activity of the dislocation-related centers in n-type Si is investigated by the deep-level transient spectroscopy. It is observed that hydrogen pen etrates into the samples already during room temperature etching but passiv ates the dislocation centers only after 300 degrees C annealing. The differ ent dislocation centers exhibit different efficiency of hydrogen passivatio n. Possible reasons for the observed peculiarities of the dislocation passi vation are discussed. (C) 1999 Elsevier Science S.A. All rights reserved.