Influence of hydrogen desorption on the generation of defects in LEPECVD

Authors
Rosenblad, C Deller, HR von Kanel, H
Citation
C. Rosenblad et al., Influence of hydrogen desorption on the generation of defects in LEPECVD, MAT SCI E B, 58(1-2), 1999, pp. 76-80
Citations number
10
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
ISSN journal
09215107 → ACNP
Volume
58
Issue
1-2
Year of publication
1999
Pages
76 - 80
Database
ISI
SICI code
0921-5107(19990212)58:1-2<76:IOHDOT>2.0.ZU;2-C
Abstract
We have applied a new variant of plasma enhanced chemical vapour deposition (CVD) that we call low energy plasma enhanced chemical vapour deposition w ith the acronym LEPECVD, to the growth of epitaxial Si. We find that the in tense exposure of the wafer to the ion bombardment from the plasma enhances the hydrogen desorption to such an extent that homoepitaxial Si(001) can b e grown at the rate of 5 nm s (-1) at substrate temperatures below 600 degr ees C. (C) 1999 Elsevier Science S.A. All rights reserved.