Hydrogen redistribution and enhanced thermal donor formation at post implantation annealing of p-type hydrogen implanted Czochralski silicon

The hydrogen redistribution and the enhanced conversion of the region near the surface of hydrogen implanted p-type Czochralski (Cz) silicon wafers in to n-type by thermal donor (TD) formation at low-temperature (450 degrees C ) post-implantation annealing have been investigated. For comparison low-te mperature (260 degrees C) RF hydrogen plasma treated Cz Si with subsequent annealing at 450 degrees C was studied, too. Spreading resistance probe (SR P) analysis and secondary ion mass spectrometry (SIMS) were used for the sa mples characterization. It is shown that the hydrogen redistribution and hy drogen enhanced thermal donor formation in hydrogen implanted or hydrogen p lasma treated p-type Ct Si leads to the formation of deep p-n junctions aft er 450 degrees C annealing. The buried defect layer in hydrogen implanted C z Si samples acts as an effective getter for hydrogen and therefore a delay in the formation of deep p-n junctions was observed as compared to hydroge n plasma treated samples with subsequent annealing at 450 degrees C. (C) 19 99 Elsevier Science S.A. All rights reserved.