The electronic properties of transition metal hydrogen complexes in silicon

Authors
Jones, R Resende, A Oberg, S Briddon, PR
Citation
R. Jones et al., The electronic properties of transition metal hydrogen complexes in silicon, MAT SCI E B, 58(1-2), 1999, pp. 113-117
Citations number
9
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
ISSN journal
09215107 → ACNP
Volume
58
Issue
1-2
Year of publication
1999
Pages
113 - 117
Database
ISI
SICI code
0921-5107(19990212)58:1-2<113:TEPOTM>2.0.ZU;2-A
Abstract
The electrical levels of various combinations of transition metal-H-n defec ts in Si are calculated using spin-polarised local density functional clust er theory with an empirical correction. The shifts of these levels with H c an be understood through a displacement and splitting of the gap t(2) manif old of states due to the impurity. Passive defects are identified. (C) 1999 Elsevier Science S.A. All rights reserved.