Hydrogen-rhodium complexes in silicon

New hydrogen-induced deep levels in rhodium-doped n- and p-type silicon wer e observed after hydrogenation by wet-chemical etching. The levels were stu died by DLTS measurements on Schottky diodes. We have found in n-type sampl es the levels E(150) at E-c - 0.33 eV; E(90) at E-c -0.16 eV; and E(70) at E-c - 0.14 eV. Levels E(150) and E(270) belong to the substitutional rhodiu m donor and acceptor. Evidence is presented that the level E(70), which was formerly ascribed to isolated rhodium, is due to a hydrogen-rhodium comple x. In p-type samples two levels were detected: H(280) at E-v + 0.50 eV and H(200) at E-v + 0.37 eV. Two different hydrogen-rhodium complexes are assig ned to these levels. The thermal stability of the levels was investigated u p to temperatures of 600 K, (C) 1999 Elsevier Science S.A. All rights reser ved.