Authors
Citation
Sk. Estreicher et Jl. Hastings, Cu-related complexes in silicon, MAT SCI E B, 58(1-2), 1999, pp. 155-158
Citations number
19
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
ISSN journal
09215107
→ ACNP
Volume
58
Issue
1-2
Year of publication
1999
Pages
155 - 158
Database
ISI
SICI code
0921-5107(19990212)58:1-2<155:CCIS>2.0.ZU;2-Z
Abstract
Hartree-Fock calculations of Cu+ in Si are performed in clusters containing
44-100 Si atoms. The configurations studied include interstitial and subst
itutional Cu+, copper-acceptor pairs, and copper-hexavacancy complexes. The
preliminary results presented below include equilibrium configurations, el
ectronic structures, and binding energies. (C) 1999 Elsevier Science S.A. A
ll rights reserved.