Self-interstitial related reactions in silicon irradiated by light ions

Recent deep level transient spectroscopy (DLTS), electron paramagnetic reso nance (EPR) and infrared (IR) spectroscopy data on interactions of self-int erstitial with carbon, aluminium, oxygen and hydrogen in silicon irradiated by light ions are reviewed. Self-interstitial behaviour in silicon was stu died by monitoring known impurity interstitials such as Ci(i) Al-i and (Si- O)(i). It is concluded that self-interstitials may be stable up to room tem perature at the equilibrium state in p-type and intrinsic silicon. Reversib le trapping of self-interstitials by oxygen atoms, hydrogen-enhanced migrat ion of interstitial aluminium as well as the origin of hydrogen-self-inters titial complexes are discussed. (C) 1999 Elsevier Science S.A. All rights r eserved.