Recent deep level transient spectroscopy (DLTS), electron paramagnetic reso
nance (EPR) and infrared (IR) spectroscopy data on interactions of self-int
erstitial with carbon, aluminium, oxygen and hydrogen in silicon irradiated
by light ions are reviewed. Self-interstitial behaviour in silicon was stu
died by monitoring known impurity interstitials such as Ci(i) Al-i and (Si-
O)(i). It is concluded that self-interstitials may be stable up to room tem
perature at the equilibrium state in p-type and intrinsic silicon. Reversib
le trapping of self-interstitials by oxygen atoms, hydrogen-enhanced migrat
ion of interstitial aluminium as well as the origin of hydrogen-self-inters
titial complexes are discussed. (C) 1999 Elsevier Science S.A. All rights r
eserved.