Avoidance of stiction in the release of highly boron doped micro-actuatorsfabricated using BESOI substrates

Citation
Ma. Rosa et al., Avoidance of stiction in the release of highly boron doped micro-actuatorsfabricated using BESOI substrates, MICROEL REL, 39(1), 1999, pp. 139-142
Citations number
10
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
MICROELECTRONICS AND RELIABILITY
ISSN journal
00262714 → ACNP
Volume
39
Issue
1
Year of publication
1999
Pages
139 - 142
Database
ISI
SICI code
0026-2714(199901)39:1<139:AOSITR>2.0.ZU;2-G
Abstract
This paper presents a new technique which has been successfully applied to the fabrication of micromachined components to avoid the 'device stiction' often encountered during the final processing steps of micro-fabrication. B ased on the use of BESOI substrates, this technique involves the heavy boro n doping of the final processed structure, followed by a timed wet etch whi ch releases the micromachined device by controllably lowering the undoped S i substrate beneath it. (C) 1999 Elsevier Science Ltd. All rights reserved.