Growth kinetics of CoSi2 and Ge islands observed with in situ transmissionelectron microscopy

We describe observations of the growth kinetics of nanosize islands in two heteroepitaxial systems, Ge/Si and CoSi2/Si. Growth was carried out during continuous observation in a modified ultra high vacuum transmission electro n microscope. Ge islands were grown on Si(100) at 650 degrees C using chemi cal vapour deposition and CoSi2 islands were grown by reactive epitaxy by e vaporating Co onto a Si(111) substrate heated to 900 degrees C. By analysin g real-time observations of the development of individual islands, we show how the factors controlling island nucleation, growth and relaxation in the se systems can be identified and understood. We discuss how the growth of t hese "quantum dots" may be controlled for novel electronic and optoelectron ic applications. (C) 1999 Elsevier Science Ltd. All rights reserved.