Nitrogen compounds and their influence on diamond deposition in flames

Citation
B. Atakan et al., Nitrogen compounds and their influence on diamond deposition in flames, PCCP PHYS C, 1(4), 1999, pp. 705-708
Citations number
12
Categorie Soggetti
Physical Chemistry/Chemical Physics
Journal title
PCCP PHYSICAL CHEMISTRY CHEMICAL PHYSICS
ISSN journal
14639076 → ACNP
Volume
1
Issue
4
Year of publication
1999
Pages
705 - 708
Database
ISI
SICI code
1463-9076(19990215)1:4<705:NCATIO>2.0.ZU;2-H
Abstract
The influence of nitrogen-containing species on the growth of diamond films is well-established in microwave and hot filament chemical vapour depositi on (CVD) systems. Here, diamond CVD was investigated in atmospheric acetyle ne-oxygen flames doped with N-containing species [N-2, N2O, NH3, N(CH3)(3)] . Small amounts of these additives increase the growth rate, while higher c oncentrations lead to preferential sp(2) carbon deposition. The growth-effe ctive amount of N-additive decreases by more than an order of magnitude in the sequence N-2 > N(CH3)(3) congruent to N2O > NH3. Simulation of the gas phase chemistry in a stagnation-flow geometry shows that the transformation of the additives towards HCN, NO and N is strongly correlated with growth enhancement and film quality decrease.