The influence of nitrogen-containing species on the growth of diamond films
is well-established in microwave and hot filament chemical vapour depositi
on (CVD) systems. Here, diamond CVD was investigated in atmospheric acetyle
ne-oxygen flames doped with N-containing species [N-2, N2O, NH3, N(CH3)(3)]
. Small amounts of these additives increase the growth rate, while higher c
oncentrations lead to preferential sp(2) carbon deposition. The growth-effe
ctive amount of N-additive decreases by more than an order of magnitude in
the sequence N-2 > N(CH3)(3) congruent to N2O > NH3. Simulation of the gas
phase chemistry in a stagnation-flow geometry shows that the transformation
of the additives towards HCN, NO and N is strongly correlated with growth
enhancement and film quality decrease.