Electron-phonon interaction in disordered conductors

The electron-phonon interaction is strongly modified in conductors with a s mall value of the electron mean free path (impure metals, thin films). As a result, the temperature dependencies of both the inelastic electron scatte ring rate and resistivity differ significantly from those for pure bulk mat erials. Recent complex measurements have shown that modified dependencies a re well described at T greater than or equal to 10 K by the electron intera ction with transverse phonons. At helium temperatures, available data are c onflicting, and cannot be described by an universal model. (C) 1999 Elsevie r Science B.V. All rights reserved.