Advances in germanium-silicon heteroepitaxy: In-situ STM/RHEED studies

Authors
Goldfarb, I Briggs, GAD
Citation
I. Goldfarb et Gad. Briggs, Advances in germanium-silicon heteroepitaxy: In-situ STM/RHEED studies, RRD MAT SCI, 1, 1998, pp. 189-213
Categorie Soggetti
Current Book Contents
Journal title
RECENT RESEARCH DEVELOPMENTS IN MATERIALS SCIENCE, VOL 1, 1998 → ACNP
Volume
1
Year of publication
1998
Pages
189 - 213
Database
ISI
SICI code