Dopant impurity diffusion from polymer diffusants and its applications in semiconductor device technology. A review

Authors
Guk, EG Kamanin, AV Shmidt, NM Shuman, VB Yurre, TA
Citation
Eg. Guk et al., Dopant impurity diffusion from polymer diffusants and its applications in semiconductor device technology. A review, SEMICONDUCT, 33(3), 1999, pp. 265-275
Citations number
64
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
SEMICONDUCTORS
ISSN journal
10637826 → ACNP
Volume
33
Issue
3
Year of publication
1999
Pages
265 - 275
Database
ISI
SICI code
1063-7826(199903)33:3<265:DIDFPD>2.0.ZU;2-2
Abstract
Aspects of the nontraditional diffusion of various impurities from polymer diffusants into silicon and III-V semiconducting compounds are examined. Da ta are presented on the application of this method to the technology of sem iconductor devices based on silicon and AlGaAs/GaAs and InGaAs(P)/InP heter ostructures. (C) 1999 American Institute of Physics. [S1063-7826(99)00103-9 ].