Polarization photosensitivity of GaN/Si heterojunctions

A technique for fabricating n-GaN/Si heterojunctions, which includes chemic al deposition of GaN layers with thicknesses of up to 20 mu m on a Si subst rate in an open gas-transport system, is developed. The photoelectric prope rties of isotypic and anisotypic heterojunctions are studied in natural and linearly polarized light. A polarization photosensitivity is observed when linearly polarized light is obliquely incident on the surface of the GaN l ayers. The induced photopleochroism increases quadratically with the angle of incidence theta and reaches 20% for theta congruent to 75 degrees. GaN/S i heterojunctions may be useable as broad-band photoanalyzers of linearly p olarized light. (C) 1999 American Institute of Physics. [S1063-7826(99)0090 3-5].