Selective doping in hydride epitaxy and the electrical properties of quantum-well GeSi : B heterostructures

Authors
Orlov, LK Rubtsova, RA Orlova, NL
Citation
Lk. Orlov et al., Selective doping in hydride epitaxy and the electrical properties of quantum-well GeSi : B heterostructures, SEMICONDUCT, 33(3), 1999, pp. 313-317
Citations number
18
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
SEMICONDUCTORS
ISSN journal
10637826 → ACNP
Volume
33
Issue
3
Year of publication
1999
Pages
313 - 317
Database
ISI
SICI code
1063-7826(199903)33:3<313:SDIHEA>2.0.ZU;2-R
Abstract
The transport properties of different groups of charge carriers in the cond ucting channels of periodic Ge-Ge1-xSix heterosystems grown by hydride epit axy on germanium are studied as functions of the structural parameters. The results are used to discuss the problem of selective doping of nanometer l ayers during hydride epitaxy. (C) 1999 American Institute of Physics. [S106 3-7826(99)01203-X].