Photoluminescence and transport properties of multilayer InAs/GaAs structures with quantum dots

The transport and optical properties of InAs/GaAs structures with quantum d ots on a vicinal surface have been investigated as a function of InAs conte nt. It was found that the quantum dots form two-dimensional hole or electro n layers, from which the Shubnikov-de Haas effect was observed. The tempera ture dependence of the resistance was measured in the [110] and [(1) over b ar 10] directions in the temperature range 4.2-300 K, and the anisotropy of the conductivity was found. Strong localization occurs when electrons are trapped in InAs dots. The spectra of inplane photoluminescence showed stron g polarization of the quantum-dot radiation. (C) 1999 American Institute of Physics. [S1063-7826(99)01303-4].