Suppression of Auger recombination in diode lasers utilizing InAsSb/InAsSbP and InAs/GaInAsSb type-II heterojunctions

The results of a comparative study of the temperature dependence of the thr eshold current, the differential quantum efficiency, and the polarization o f light are reported for type-I and type-II InAsSb/InAsSbP heterostructures and for a tunneling injection laser utilizing a type-II GaInAsSb/InGaAsSb separate-confinement heterojunction. The theoretically predicted suppressio n of nonradiative Auger recombination in type-II InAsSb/InAsSbP lasers with a large ratio of band discontinuities at the interface Delta E-nu/Delta E- c =3.4 is verified experimentally. Weakening of the temperature dependence of the threshold current is established for both type-II laser configuratio ns. The maximum working temperatures T-lim =203 and 195 K and the character istic temperatures T-0=40 and 47 K are attained for (respectively) a conven tional type-II InAsSb/InAsSbP laser and a type-II p-GaInAsSb/n-InGaAsSb tun neling injection laser. (C) 1999 American Institute of Physics. [S1063-7826 (99)02103-1].