Citation
Cs. Ryu et al., Barriers for copper interconnections, SOL ST TECH, 42(4), 1999, pp. 53
Citations number
12
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
SOLID STATE TECHNOLOGY
ISSN journal
0038111X
→ ACNP
Volume
42
Issue
4
Year of publication
1999
Database
ISI
SICI code
0038-111X(199904)42:4<53:BFCI>2.0.ZU;2-O
Abstract
The integration of Cu interconnections will require sophisticated structure
s to prevent Cu from coming into contact with devices. Barrier layers must
have good adhesion to both Cu and intermetal dielectrics, and yield desirab
le microstructure for the deposition of Cu. This paper discusses several cr
itical barrier requirements, and compares the barrier properties of Ta and
Ti/TiN layers.