Citation
Gr. Bell et al., Nanoscale effects of arsenic kinetics on GaAs(001)-(2x4) homoepitaxy, SURF SCI, 423(2-3), 1999, pp. L280-L284
Citations number
9
Categorie Soggetti
Physical Chemistry/Chemical Physics
Journal title
SURFACE SCIENCE
ISSN journal
00396028
→ ACNP
Volume
423
Issue
2-3
Year of publication
1999
Pages
L280 - L284
Database
ISI
SICI code
0039-6028(19990310)423:2-3<L280:NEOAKO>2.0.ZU;2-W
Abstract
The early stages of homoepitaxy on the GaAs (001)-(2 x 4) surface have been
studied by scanning tunnelling microscopy (STM). Detailed island statistic
s have been obtained from STM images and show a clear dependence on both th
e arsenic species used and the incident arsenic flux. These results are exp
lained by considering the effects of the macroscopic arsenic kinetics (As-2
and As-4) on island nucleation and growth at the nanometre scale. (C) 1999
Elsevier Science B.V. All rights reserved.