Growth mechanism of 7 x 7 domains from the '1 x 1' phase on a quenched Si(111) surface studied by high temperature STM

Growth processes of 7 x 7 domains from the '1 x 1' phase on quenched Si(lll ) surfaces were studied by high temperature STM at a temperature around 340 degrees C, which is more than 100 degrees C lower than temperatures at whi ch previous studies had been carried out. Several metastable structure unit s were newly found, which play essential roles in the transformation to the dimer adatom stacking fault (DAS) structures. Basic restructuring processe s were found to be shifts of dimer lines, which surround a faulted triangle , along and perpendicular to the line. (C) 1999 Elsevier Science B.V. All r ights reserved.