In situ ellipsometry studies of temperature-dependent Au thin-film growth

We used an in situ ellipsometer to measure the temperature-dependent growth curves, which are Delta versus psi curves measured in real time, of the Au thin-films deposited under identical conditions, with the exception of dir substrate temperature, for 240 s on thermally oxidized Si wafers by magnet ron sputtering. The growth curves measured at substrate temperatures of 50, 100, 150, and 200 degrees C, respectively, exhibited distinctive temperatu re-dependent trajectories; as we raised the substrate temperature, the radi us of curvature increased. We were able to analyze the temperature dependen t variation of ellipsometric constants by introducing a growth model such t hat the void fraction decreased as a function of thickness, and also using the results of spectroscopic ellipsometry analysis. We found that the remna nt void fraction, the void fraction decrease rate, and the depolarization f actor are the major parameters that govern the observed temperature depende nce of growth curves. (C) 1999 Elsevier Science S.A. All rights reserved.