Control of silicon particle behavior using a low frequency electromagneticfield in silane plasma chemical vapor deposition

Spatiotemporal evolution of silicon particles in silane plasma was investig ated with and/or without a crossed magnetic field using the laser light sca ttering method (Mie scattering) and scanning electron microscopy (SEM). Sil icon particles were excluded from the discharge space in the opposite direc tion to the E x B drift, and then could be collected at about 1.5 x 10(10). cm(-2) on the upper substrate, in the opposite direction to the force of gr avity. On the other hand, silicon particles were collected at about 6 x 10( 10) cm(-2) on the bottom substrate, in the direction of gravity. Uniform a- Si:H thin film could be prepared by using the modulated electromagnetic fie ld with the same frequency, f(EB) = 0.5 Hz. A possible mechanism is discuss ed to prepare large-area uniform a-Si:H thin film under the particle-for co nditions using the modulated electromagnetic field and multielectrodes. (C) 1999 Elsevier Science S.A. All rights reserved.