Alkali metal promoted oxidation of the Si(113) surface

Citation
C. Hwang et al., Alkali metal promoted oxidation of the Si(113) surface, THIN SOL FI, 341(1-2), 1999, pp. 156-159
Citations number
11
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
THIN SOLID FILMS
ISSN journal
00406090 → ACNP
Volume
341
Issue
1-2
Year of publication
1999
Pages
156 - 159
Database
ISI
SICI code
0040-6090(19990312)341:1-2<156:AMPOOT>2.0.ZU;2-W
Abstract
We have investigated the sodium-promoted oxidation of the Si(113) surface b y using X-ray photoelectron spectroscopy (Mg K-alpha, 1253.6 eV). 0 1s, Si 2p and Na 1s core level spectra for the O-2/Na/Si(113) surface were measure d with increasing oxygen exposure and at several annealing temperatures. It was observed that sodium enhanced oxygen adsorption by about three times. When the 1.4 monolayer Na/Si(113) surface was exposed to oxygen at 150 K, t he sodium overlayer was oxidized but the silicon substrate was not. Subsequ ent annealing transferred oxygen atoms into the silicon substrate and desor bed sodium from the Si(113) surface. This oxidation process resulted in thi n silicon dioxide films at about 670 K. The results an consistent with thos e from low index silicon surfaces, Si(100) and Si(111), and are interpreted within a previously suggested sponge model fur the role of all;ali metal i n the: promoted oxidation. (C) 1999 Elsevier Science S.A. All rights reserv ed.