Fabrication of gated diamond field emitter array using a selective diamondgrowth process

Authors
Ha, SC Kang, DH Kim, KB Min, SH Kim, IH Lee, JD
Citation
Sc. Ha et al., Fabrication of gated diamond field emitter array using a selective diamondgrowth process, THIN SOL FI, 341(1-2), 1999, pp. 216-220
Citations number
6
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
THIN SOLID FILMS
ISSN journal
00406090 → ACNP
Volume
341
Issue
1-2
Year of publication
1999
Pages
216 - 220
Database
ISI
SICI code
0040-6090(19990312)341:1-2<216:FOGDFE>2.0.ZU;2-H
Abstract
A novel processing sequence for the formation of gated diamond field emitte r array (triode system) is proposed and the feasibility is tested by invest igating the field emission property. The processing scheme is based on the selective deposition of diamond by using the well established nucleation en hanced process on substrate, so called bias enhanced nucleation (BEN). The structure of substrate was patterned [SiO2/Mo(Sate)SiO2(insulator)Si(100). Our preliminary results show that the diamond field emitter is turned on at around 87 V/mu m with the current level of about several mu A. (C) 1999 El sevier Science S.A. All rights: reserved.