Ion beam sputtering of SnO2 with low energy oxygen ion beams

The effects of oxygen ion bombardment on tin oxide films during ion beam sp uttering of SnO2 targets at room temperature have been systematically inves tigated with the variation in oxygen ion beam energy in the range of 0-150 eV directed onto the growing film. The results have been compared with thos e of ion beam sputtering of SnO2 targets without oxygen ion be:un bombardme nt. Chemical, compositional and structural analyses have been performed on these films. The results indicate that, by the use of oxygen ion-beams with low energy in ion beam sputtering of SnO2 targets, stoichiometric and crys talline stannic oxide films can be obtained on Si(100) substrates at room t emperature and that the crystallographic structure and the phase of the fil ms are functions of the energy of the oxygen ion beam. (C) 1999 Elsevier Sc ience S.A. All rights reserved.